Kinetic Monte Carlo model for homoepitaxial growth of Ga2O3
نویسندگان
چکیده
منابع مشابه
Multiscale Kinetic Monte-Carlo for Simulating Epitaxial Growth
We present a fast Monte-Carlo algorithm for simulating epitaxial surface growth, based on the continuous-time Monte-Carlo algorithm of Bortz, Kalos and Lebowitz. When simulating realistic growth regimes, much computational time is consumed by the relatively fast dynamics of the adatoms. Continuum and continuum-discrete hybrid methods have been developed to approach this issue; however in many s...
متن کاملKinetic Monte Carlo Simulations of Crystal Growth in Ferroelectric materials
We study the growth process of ferroelectric materials by kinetic Monte Carlo simulations. An ionic model with long-range Coulomb interactions is used to model the relaxor single crystals. The growth is characterized by thermodynamic processes involving adsorption and evaporation, with solid-on-solid restrictions. An algorithm is developed in order to simulate growth under such a model, for whi...
متن کاملKinetic Monte Carlo Simulation of Strained Heteroepitaxial Growth with Intermixing
An efficient method for the simulation of strained heteroepitaxial growth with intermixing using kinetic Monte Carlo is presented. The model used is based on a solid-on-solid bond counting formulation in which elastic effects are incorporated using a ball and spring model. While idealized, this model nevertheless captures many aspects of heteroepitaxial growth, including nucleation, surface dif...
متن کاملMonte Carlo simulation of a kinetic Ising model for dendritic growth
We have developed a Monte Carlo method for the interfacial dynamics of a two-phase Ising-like system made unstable by a temperature gradient. Dendritic shapes form and rapidly reach an asymptotic regime in which their tip velocities are approximately constant with time. A power-spectrum analysis of interfacial fluctuations in the asymptotic regime is consistent with roughening. Over the last fe...
متن کاملA simple model for the growth of polycrystalline Si using the kinetic Monte Carlo simulation
An extension to the kinetic Monte Carlo simulation technique was developed in order to study thin film deposition and growth of a system approximating polycrystalline silicon. This method was developed to determine the effect of varying the angle of incidence of an atomic beam on the morphology of a poly-Si thin film grown on a crystalline Si substrate. This deposition procedure produced materi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review Research
سال: 2020
ISSN: 2643-1564
DOI: 10.1103/physrevresearch.2.033170